| PART |
Description |
Maker |
| WV3EG72M64ETSU335D3SG WV3EG64M72ETSU-D3 WV3EG72M64 |
512MB - 64Mx72 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7264S403JD3 W3EG7264S335JD3 W3EG7264S265JD3 W3 |
512MB - 64Mx72 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
| HYB25D512160AT-6 HYB25D512800AT-6 HYB25D512160AT-7 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR266A (2-3-3)
|
Infineon
|
| WED3DG7266V-D1 |
512MB - 64Mx72 SDRAM, UNBUFFERED, w/PLL
|
http://
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WV3HG64M72EEU665PD4MG WV3HG64M72EEU806PD4SG WV3HG6 |
512MB - 64Mx72 DDR2 SDRAM, UNBUFFERED SO-DIMM, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| M381L6523MT1 |
64Mx72 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
|
Samsung Electronic
|
| M383L6420BT1 |
64Mx72 DDR SDRAM 184pin DIMM based on 64Mx4 Data Sheet
|
Samsung Electronic
|
